| 摘要 |
An object of the present invention is to provide, at low costs, an environmental friendly bonding material for a semiconductor, having sustained bonding reliability even when used at a temperature as high as 200°C or higher for a long period of time, the semiconductor device having a semiconductor element (1), a supporting electrode body (3) bonded to a first face of the semiconductor element (1) via a first bonding member (4), and a lead electrode body (7) bonded to a second face of the semiconductor element (1) supported by the supporting electrode body (3) via a second bonding member (2), the semiconductor device having a Ni-based plating layer and an intermetallic compound layer containing at least one of Cu 6 Sn 5 and (Cu,Ni) 6 Sn 5 compounds at an interface between the supporting electrode body (3) and the first bonding member (4), and having a Ni-based plating layer and an intermetallic compound layer containing at least one of Cu 6 Sn 5 and (Cu,Ni) 6 Sn 5 compounds at an interface between the lead electrode body (7) and the second bonding member (2). |
