| 发明名称 |
VOIDS IN STI REGIONS FOR FORMING BULK FINFETS |
| 摘要 |
<p>PURPOSE: A void in STI regions for forming bulk FiNFETS is provided to improve the performance of final integrated circuits by forming a void inside STI regions. CONSTITUTION: In a void in STI regions for forming bulk FiNFETS, two insulating areas is arranged on a substrate having a void(38). A first semiconductor strip includes an upper part forming a fin upward the top side of the two insulating areas. A gate dielectric(62) is formed on the top and side of the fin. A gate electrode(64) is formed on the gate dielectric.</p> |
| 申请公布号 |
KR20110040651(A) |
申请公布日期 |
2011.04.20 |
| 申请号 |
KR20100071678 |
申请日期 |
2010.07.23 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YUAN FENG;LEE TSUNG LIN;CHEN HUNG MING;CHANG CHANG YUN |
| 分类号 |
H01L29/78;H01L21/336;H01L21/762 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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