| 发明名称 |
Transistors with fluorine treatment |
| 摘要 |
A semiconductor based device, comprises a plurality of active semiconductor layers experiencing an operating electric (E) field; and a negative ion region (56) within at least one of said plurality of semiconductor layers to counter said operating (E) field.
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| 申请公布号 |
EP2312635(A2) |
申请公布日期 |
2011.04.20 |
| 申请号 |
EP20110153386 |
申请日期 |
2006.07.07 |
| 申请人 |
CREE, INC. |
发明人 |
WU, YIFENG;MOORE, MARCIA;PARIKH, PRIMIT;WISLEDER, TIM |
| 分类号 |
H01L29/778;H01L21/338;H01L29/20;H01L29/207;H01L29/40 |
主分类号 |
H01L29/778 |
| 代理机构 |
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代理人 |
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