发明名称 |
Method of manufacturing nano-crystalline silicon dot layer |
摘要 |
A method of manufacturing a nano-crystalline silicon dot layer is provided. A silicon layer is formed over a substrate. The silicon layer includes crystalline silicon region and amorphous silicon region. An oxidation process is performed to oxidize the amorphous silicon region and the surfaces of the crystalline silicon region to form a silicon oxide layer containing nano-crystalline silicon dots.
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申请公布号 |
US7927660(B2) |
申请公布日期 |
2011.04.19 |
申请号 |
US20060465883 |
申请日期 |
2006.08.21 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LU CHI-PIN |
分类号 |
C23C28/00;H01L21/336 |
主分类号 |
C23C28/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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