发明名称 |
Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory |
摘要 |
The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer. A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.
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申请公布号 |
US7929342(B2) |
申请公布日期 |
2011.04.19 |
申请号 |
US20060996711 |
申请日期 |
2006.08.04 |
申请人 |
NEC CORPORATION |
发明人 |
NUMATA HIDEAKI;OHSHIMA NORIKAZU;SUZUKI TETSUHIRO;SUGIBAYASHI TADAHIKO;ISHIWATA NOBUYUKI;FUKAMI SHUNSUKE |
分类号 |
G11C11/14 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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