发明名称 Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device
摘要 The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination device which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.
申请公布号 US7929154(B2) 申请公布日期 2011.04.19
申请号 US20060640394 申请日期 2006.12.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO;YAMAMOTO YOSHIAKI
分类号 G01B11/14 主分类号 G01B11/14
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