发明名称 Film stacks to prevent UV-induced device damage
摘要 A film stack includes an interlayer dielectric formed over one or more devices. The film stack further includes a first layer having a high extinction coefficient formed on the interlayer dielectric and a second layer having a low extinction coefficient formed on the first layer. The first and second layers prevent ultraviolet induced damage to the one or more devices while minimizing reflectivity for lithographic processes.
申请公布号 US7927723(B1) 申请公布日期 2011.04.19
申请号 US20050091524 申请日期 2005.03.29
申请人 SPANSION LLC;GLOBALFOUNDRIES INC. 发明人 HUI ANGELA T.;CHENG NING;NGO MINH VAN;TOKUNO HIROKAZU;LI WENMEI
分类号 G02B1/10;B32B9/00;B32B19/00;G02B5/28 主分类号 G02B1/10
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