发明名称 Low resistivity silicon carbide
摘要 An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
申请公布号 US7927915(B2) 申请公布日期 2011.04.19
申请号 US20040872746 申请日期 2004.06.21
申请人 ROHM AND HAAS COMPANY 发明人 GOELA JITENDRA S.;PICKERING MICHAEL A.
分类号 H01L21/00;C23C16/01;C23C16/32 主分类号 H01L21/00
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