发明名称 Light emitting element and manufacturing method thereof
摘要 In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the−c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the−c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
申请公布号 US7928460(B2) 申请公布日期 2011.04.19
申请号 US20080314214 申请日期 2008.12.05
申请人 SHARP KABUSHIKI KAISHA 发明人 KAWAKAMI TOSHIYUKI;KAWAGUCHI YOSHINOBU;KAMIKAWA TAKESHI
分类号 H01L33/10;H01L33/16;H01S5/028;H01S5/22;H01S5/343 主分类号 H01L33/10
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