发明名称 Plasma processing method and method for manufacturing an electronic device
摘要 The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of <2.24 eV electron temperature, so that the generation of ions tending to damage any insulating film is reduced to thereby realize high-quality oxynitriding. Further, there is provided a process for producing an electronic appliance in which use is made of the method of plasma treatment.
申请公布号 US7928018(B2) 申请公布日期 2011.04.19
申请号 US20050594895 申请日期 2005.03.31
申请人 FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE 发明人 OHMI TADAHIRO;TERAMOTO AKINOBU;YAMAUCHI HIROSHI;HAYAKAWA YUKIO
分类号 H01L21/31;H05H1/46;C23C16/00;H01L21/02;H01L21/28;H01L21/3105;H01L21/314;H01L21/318;H01L21/469;H01L21/8246;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/31
代理机构 代理人
主权项
地址