发明名称 |
Plasma processing method and method for manufacturing an electronic device |
摘要 |
The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of <2.24 eV electron temperature, so that the generation of ions tending to damage any insulating film is reduced to thereby realize high-quality oxynitriding. Further, there is provided a process for producing an electronic appliance in which use is made of the method of plasma treatment.
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申请公布号 |
US7928018(B2) |
申请公布日期 |
2011.04.19 |
申请号 |
US20050594895 |
申请日期 |
2005.03.31 |
申请人 |
FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE |
发明人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;YAMAUCHI HIROSHI;HAYAKAWA YUKIO |
分类号 |
H01L21/31;H05H1/46;C23C16/00;H01L21/02;H01L21/28;H01L21/3105;H01L21/314;H01L21/318;H01L21/469;H01L21/8246;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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