| 摘要 |
A disclosed semiconductor device includes a MOS transistor that causes no problems concerning the formation of a thick gate insulating film and that is applicable to high withstand voltage devices. A drain region has a double diffusion structure including an N-drain region 3d and an N+ drain region 11d. A gate electrode includes a first gate electrode 9 formed on an insulating film 7 and a second gate electrode 13 formed on the first gate electrode 9 via a gate electrode insulating film 11. Between the gate insulating film 7 and the N+ source region 11s, a field insulating film 15 is disposed, over which an edge of the first gate electrode 9 is disposed. A gate voltage applied to the second gate electrode 13 via a gate wiring 13g is divided between the gate insulating film 7 and the gate electrode insulating film 11.
|
