发明名称 Multi-bit memory device using multi-plug
摘要 A memory device may include a cathode, an anode, a link connected to the anode, and a first connection element that connects the link to the cathode. The link and the anode may be located in a position lower than that of the cathode or the link and the anode may be located in a position higher than that of the cathode. Also, the cathode, the anode, the link, and the first connection element may be formed on the same plane.
申请公布号 US7929330(B2) 申请公布日期 2011.04.19
申请号 US20090379894 申请日期 2009.03.04
申请人 SAMSUNG ELECTRONICS CO., LTD.;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION 发明人 KIM DEOK-KEE;YOU HA-YOUNG;JOO YOUNG-CHANG;SUNG JUNG-HUN;HWANG SOO-JUNG;JUNG SUNG-YUP
分类号 G11C17/06 主分类号 G11C17/06
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