| 摘要 |
A method of production of semiconductor light emission devices for forming stripes of two multilayers having different emission wavelengths on a substrate, including the steps of: depositing a first multilayer including an active layer on the substrate; selectively etching the first multilayer to form a plurality of adjoining pairs of stripes of the first multilayer; depositing a second multilayer including an active layer on the substrate and the stripes of the first multilayer; selectively etching the second multilayer to form a plurality of adjoining pairs of stripes of the second multilayer on the substrate between the stripes of the first multilayer; and dividing the substrate between adjoining pairs of stripes of the first multilayer and between adjoining pairs of stripes of the second multilayer to divide it into semiconductor light emission devices provided with a stripe of the first multilayer and the second multilayer having different emission wavelengths.
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