发明名称 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
摘要 Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.
申请公布号 US7928523(B2) 申请公布日期 2011.04.19
申请号 US20090512428 申请日期 2009.07.30
申请人 NANTERO, INC. 发明人 BERTIN CLAUDE L.;RUECKES THOMAS;SEGAL BRENT M.;VOGELI BERNHARD;BROCK DARREN K.;JAIPRAKASH VENKATACHALAM C.
分类号 H01L29/82;G11C7/06;G11C8/02;G11C11/00;G11C11/50;G11C13/02;G11C16/02;G11C16/04;G11C17/16;G11C23/00;H01H59/00;H01J1/62;H01L;H01L21/336;H01L21/82;H01L21/8246;H01L27/112;H01L27/115;H01L27/28;H01L29/06;H01L29/423;H01L29/739;H01L29/745;H01L29/76;H01L51/00;H01L51/05;H01L51/30;H03K17/16 主分类号 H01L29/82
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