发明名称 |
Optical device having strained buried channel |
摘要 |
Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.
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申请公布号 |
US7928442(B2) |
申请公布日期 |
2011.04.19 |
申请号 |
US20070441381 |
申请日期 |
2007.08.17 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
MHEEN BONGKI;PARK JEONG-WOO;KIM HYUN-SOO;KIM GYUNGOCK |
分类号 |
H01L31/036;H01L33/00 |
主分类号 |
H01L31/036 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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