| 摘要 |
According to an aspect of the present invention, there is provided a method for correcting a defect in an EUV mask, the method including: preparing an EUV mask including an absorption layer and an anti-reflection layer forming a pattern; recognizing a defect region in the pattern; defining a first region and a second region on the defect region, the second region extending from a desired pattern edge by a given distance, the first region being defined on the rest; removing the first region of the anti-reflection layer and the absorption layer by irradiating a beam in a first atmosphere; removing the second region of the anti-reflection layer and the absorption layer by irradiating the beam in a second atmosphere; and oxidizing an exposed side surface of the desired pattern edge of the absorption layer.
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