发明名称 |
Multi-thickness semiconductor with fully depleted devices and photonic integration |
摘要 |
Techniques are disclosed that facilitate fabrication of semiconductors including structures and devices of varying thickness. One embodiment provides a method for semiconductor device fabrication that includes thinning a region of a semiconductor wafer upon which the device is to be formed thereby defining a thin region and a thick region of the wafer. The method continues with forming on the thick region one or more photonic devices and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices. Another embodiment provides a semiconductor device that includes a semiconductor wafer defining a thin region and a thick region. The device further includes one or more photonic devices and/or partially depleted electronic devices formed on the thick region, and one or more fully depleted electronic devices formed on the thin region. An isolation area can be formed between the thin region and the thick region.
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申请公布号 |
US7927979(B2) |
申请公布日期 |
2011.04.19 |
申请号 |
US20100913187 |
申请日期 |
2010.10.27 |
申请人 |
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. |
发明人 |
HILL CRAIG M.;POMERENE ANDREW T S;CAROTHERS DANIEL N.;CONWAY TIMOTHY J.;VU VU A. |
分类号 |
H01L21/762;H01L27/12 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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