发明名称 |
Profile of flash memory cells |
摘要 |
A semiconductor structure includes a semiconductor substrate; a tunneling layer on the semiconductor substrate; a source region adjacent the tunneling layer; and a floating gate on the tunneling layer. The floating gate comprises a first edge having an upper portion and a lower portion, wherein the lower portion is recessed from the upper portion. The semiconductor structure further includes a blocking layer on the floating gate, wherein the blocking layer has a first edge facing a same direction as the first edge of the floating gate.
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申请公布号 |
US7928499(B2) |
申请公布日期 |
2011.04.19 |
申请号 |
US20070715229 |
申请日期 |
2007.03.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU SHIH-CHANG;CHANG CHU-WEI;LO CHI-HSIN;TSAI CHIA-SHIUNG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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