发明名称 |
Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system |
摘要 |
A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.
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申请公布号 |
US7928486(B2) |
申请公布日期 |
2011.04.19 |
申请号 |
US20090642094 |
申请日期 |
2009.12.18 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YUZURIHARA HIROSHI;MISHIMA RYUICHI;WATANABE TAKANORI;ICHIKAWA TAKESHI;TAMURA SEIICHI |
分类号 |
H01L31/112;H01L27/146;H01L27/148;H01L31/10 |
主分类号 |
H01L31/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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