发明名称 HIGH IMPEDANCE BIAS NETWORK
摘要 PURPOSE: A high impedance bias network is provided to compensate the parasitic diode joint portion of anti-parallel diode pair by connecting a third diode between a power node and a signal node. CONSTITUTION: A bias circuit network(100) includes anti-parallel diode pair(105), and the anti-parallel diode pair includes a first diode(101) and a second diode(102). An anode(110) of the second diode is connected to a cathode(112) of the first diode, and a cathode(111) of the second diode is connected to the anode of the first diode. The bias circuit network provides high impedance, and biases the input signal of a system(10). The input signal is transferred to a first terminal(107) of the bias circuit network, and common mode voltage(108) is provided to a second terminal(109) of the bias circuit network.
申请公布号 KR20110039206(A) 申请公布日期 2011.04.15
申请号 KR20100098628 申请日期 2010.10.11
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 BENNETT CHRISTOPHER;JASA HRVOJE
分类号 H03F1/30;H03F1/56 主分类号 H03F1/30
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