METHOD OF REMOVING HEAVY METAL IN SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method of removing heavy metal from a semiconductor substrate is provided to remove the heavy metal contained in the semiconductor substrate reliably by implementing the proper heat treatment after attaching the material for reducing the potential barrier on the other side. CONSTITUTION: The rear side of a semiconductor substrate is polished. A circuit is formed on a front side of the rear side of the semiconductor substrate. The material reducing the potential barrier is attached to the rear side of the semiconductor substrate. The thermal process is implemented on a semiconductor substrate based on the thickness and the specific resistance of the semiconductor substrate.