HERSTELLUNG VON LUFTSPALTEN UM EINE VERBINDUNGSLEITUNG HERUM

摘要

The present invention relates to a method for the production of airgaps in a semiconductor device. The formation of airgaps is based on chemically and/or mechanically changing the properties of sidewalls of a hole in a first dielectric layer locally, such that the sidewalls of the hole in said first dielectric layer are converted and become etchable by a first etching substance.