| 摘要 |
A photoelectric conversion device includes a photoelectric conversion layer which mainly composed of a compound semiconductor containing a group Ib element, at least two group IIIb elements including Ga, and a group VIb element and contains an alkaline(-earth) metal. Concentration distributions of the alkaline(-earth) metal and Ga in the photoelectric conversion layer in the thickness direction includes a valley with the lowest concentration and an area with a higher concentration between the substrate and the valley, and satisfy Expressions (1) and (2) below: 1.0×10−6≦̸AN [mol/cc]≦̸2.0×10−5  (1) and 1.0≦̸CN/CG  (2), where AN represents the alkaline(-earth) metal concentration at the valley, BN represents the highest alkaline(-earth) metal concentration between the substrate and the valley, AG represents the Ga concentration at the valley, BG represents the highest Ga concentration between the substrate and the valley, CN═BN/AN, and CG═BG/AG.
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