GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE AND PRODUCING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate suitable for producing a light-emitting device where the blue shift of light emission is suppressed, a group III nitride crystal substrate with an epitaxial layer, a semiconductor device and a producing method of the same.

SOLUTION: In the group III nitride crystal substrate 1, the uniform distortion of the surface layer of the crystal substrate obtained by an X-ray diffraction measurement varying an X-ray penetration depth from the main surface 1s of the crystal substrate while satisfying X-ray diffraction conditions for the arbitrary specific crystal lattice plane of the crystal substrate is 1.9×10-3or less, the plane orientation gap of the specific crystal lattice plane of the surface layer of the crystal substrate is 350 arcsec or less and the plane orientation of the main surface is inclined 10° or more and 80° or less in a <10-10> direction from the (0001) plane or (000-1) plane 1c of the crystal substrate.

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