| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a high quality semiconductor substrate removing residual defects occurring after annealing after ion implantation and causing no lamination fault regardless of later formation of a silicon epitaxial layer. <P>SOLUTION: The method of manufacturing the semiconductor substrate at least includes a step of selectively implanting ions into a silicon monocrystalline substrate, a heat-treating step of performing recovery heat treatment for recovering the crystallinity of the silicon monocrystalline substrate and diffusion heat treatment for diffusing the implanted ions, a heat oxide film forming step of forming a heat oxide film which is thick enough to take in the entire of an amorphous layer formed on a front surface layer of the silicon monocrystalline substrate by the ion-implanting step, a step of removing the formed heat oxide film, and a step of forming the epitaxial layer on a heat oxide film removed surface. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
