| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor substrate, along with an epitaxial substrate and semiconductor device, capable of improving light emission intensity of the semiconductor device. SOLUTION: In the semiconductor device 100, a surface 10a has a specific plane orientation, and a sulfide of 30×10<SP>10</SP>to 2,000×10<SP>10</SP>pcs./cm<SP>2</SP>in terms of S conversion and an oxide of 2 to 20 at% in terms of O conversion exist in a surface layer 12, thereby preventing C from piling up in an interface between an epitaxial layer 22 and the group III nitride semiconductor substrate 10. Thereby, the formation of a high resistance layer is prevented in the interface between the epitaxial layer 22 and the group III nitride semiconductor substrate 10. Accordingly, the light emission intensity of the semiconductor device 100 can be improved. COPYRIGHT: (C)2011,JPO&INPIT |
