| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a conventional semiconductor memory does not ensure accurate data writing. SOLUTION: A semiconductor memory includes: first and second inverters constituting a memory element, a write transistor N3 provided between a memory node V1 on output side of the first inverter and a write bit line WBL0 to control a current based on a write word line WWL, a write transistor N4 provided between a memory node V2 on output side of the second inverter and a write bit line WBL1 to control a current based on a write word line WWL, an auxiliary transistor P3 provided between the first inverter and a higher-voltage-side power supply to control a current based on data to be written in the memory element, and an auxiliary transistor P4 provided between the second inverter and the higher-voltage-side power supply to control a current based on data to be written in the memory element. COPYRIGHT: (C)2011,JPO&INPIT
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