发明名称 Transistor Performance Modification with Stressor Structures
摘要 A transistor structure with stress enhancement geometry aligned above the channel region. Also, a transistor structure with stress enhancement geometries located above and aligned with opposite sides of the channel region. Furthermore, methods for fabricating integrated circuits containing transistors with stress enhancement geometries.
申请公布号 US2011084323(A1) 申请公布日期 2011.04.14
申请号 US20090576310 申请日期 2009.10.09
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SUMMERFELT SCOTT R.;AGGARWAL RAJNI J.;TANG SHAOPING
分类号 H01L27/06;H01L21/02 主分类号 H01L27/06
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