发明名称 |
Transistor Performance Modification with Stressor Structures |
摘要 |
A transistor structure with stress enhancement geometry aligned above the channel region. Also, a transistor structure with stress enhancement geometries located above and aligned with opposite sides of the channel region. Furthermore, methods for fabricating integrated circuits containing transistors with stress enhancement geometries.
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申请公布号 |
US2011084323(A1) |
申请公布日期 |
2011.04.14 |
申请号 |
US20090576310 |
申请日期 |
2009.10.09 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SUMMERFELT SCOTT R.;AGGARWAL RAJNI J.;TANG SHAOPING |
分类号 |
H01L27/06;H01L21/02 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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