发明名称 LIGHT-EMITTING ELEMENT, AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a light-emitting element capable of extracting light emitted from an active layer to the outside of the element more efficiently than a conventional one. <P>SOLUTION: The light-emitting element includes at least: a semiconductor substrate; a semiconductor multilayer reflective layer formed on the semiconductor substrate and comprising a semiconductor thin film; a semiconductor layered structure part formed on the semiconductor multilayer reflective layer and including a luminescent layer; and a current diffusion layer. In the light-emitting element, the front surface of the current diffusion layer is roughened. The semiconductor multilayer reflective layer includes: a first Bragg reflection layer for subjecting incident light from the luminescent layer entering at an angle not larger than a critical angle when viewed from a normal direction on the front surface of the current diffusion layer to Bragg reflection; and a second Bragg reflection layer for subjecting incident light from the luminescent layer entering at an angle larger than the critical angle when viewed from the normal direction on the front surface of the current diffusion layer to Bragg reflection, wherein at least the Bragg reflection layer on the side located adjacent to the luminescent layer out of the first Bragg reflection layer and the second Bragg reflection layer has translucency to the light from the luminescent layer. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011077496(A) 申请公布日期 2011.04.14
申请号 JP20100060159 申请日期 2010.03.17
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 IKEDA ATSUSHI;SAKAI KENJI
分类号 H01L33/10;H01L33/22;H01L33/30 主分类号 H01L33/10
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