| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit in which no error signal is generated even when the circuit is exposed to a transient voltage noise that occurs with a transition from a first state indicating a conduction of a high potential side switching device to a second state indicating a non-conduction of the high potential side switching device, or vice versa. SOLUTION: A high potential-side switching device drive circuit 1 includes short circuit means 31 and 32 that are controlled by second level shifted signals S6 and S7 simultaneously generated across second load resistances 30 and 29, respectively, to thereby suppress output of level shift so as to prevent output of the other from being generated when a signal is generated in at least either one of first level shifted signals S4 and S5 in ON and OFF sections generated across first load resistances 28 and 27 in a level shift circuit 2. COPYRIGHT: (C)2011,JPO&INPIT |
