| 摘要 |
PROBLEM TO BE SOLVED: To overcome or relax trade-off between parasitic capacitance and leakage current without sacrificing ON resistance. SOLUTION: A TFT (Thin Film Transistor) 10B includes two source/drain electrodes 18, 19 respectively contacting semiconductor regions located with a channel forming region in between in the planar view of a semiconductor film 15. In a contour part 30 of the source/drain electrode 18, 19 in a region (hatched part) which contacts the semiconductor film 15, edge points 31 of the source/drain electrode 18, 19 at both ends thereof are positioned on the outer side of a gate electrode 13 in the planar view. COPYRIGHT: (C)2011,JPO&INPIT |
