发明名称 NITRIDE THIN-FILM DEPOSITING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a nitride thin-film depositing apparatus that performs the crystal growth of a group III-V semiconductor thin film using a nitriding source at normal pressure which is made uniform in film thickness while the flow rate of a gas is maintained. SOLUTION: The nitride thin-film depositing apparatus 100 that deposits, on the surface of a substrate 10, the silicon nitride film using as a supply source gas containing a silane gas and an ammonium gas for depositing the group III-V nitride semiconductor thin film using the nitriding source at normal pressure includes a susceptor 12a where the substrate is placed, a heater 13 configured to heat the susceptor from its reverse surface, and a quartz-made ring (barrier member) 11 which is provided upstream from the substrate and taller than the upper surface of the substrate on the upper surface of the susceptor in a region in which heat is uniformed by the heater. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011077315(A) 申请公布日期 2011.04.14
申请号 JP20090227588 申请日期 2009.09.30
申请人 OKI ELECTRIC INDUSTRY CO LTD 发明人 TODA NORIHIKO
分类号 H01L21/31;H01L21/205;H01L21/318 主分类号 H01L21/31
代理机构 代理人
主权项
地址