| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device provided with an MISFET having a high dielectric constant gate insulating film and a metal gate electrode. SOLUTION: An Hf-containing insulating film 4a consisting essentially of Hf, La and O is formed as a high dielectric constant gate insulating film for an n-channel MISFET, and an Hf-containing insulating film 4b consisting essentially of Hf, Al and O is formed as a high dielectric constant gate insulating film for a p-channel MISFET. Then a metal film 7 and a silicon film 8 are formed and patterned through dry etching to form gate electrodes GE1 and GE2. Then, Hf-containing insulating films 4a and 4b at parts which are not covered with the gate electrodes GE1 and GE2 are removed by dry etching. At this time, wet processing using an acidic solution containing a hydrofluoric acid is carried out after wet processing using an acidic solution containing no hydrofluoric acid and wet processing using an alkaline solution. COPYRIGHT: (C)2011,JPO&INPIT |
