SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device having a configuration that makes it possible to suppress deterioration of the electrical characteristics of an insulating member. The semiconductor device is provided with: an n-SiC layer (12); a source contact electrode (16) formed on the main surface of the n-SiC layer (12); a gate electrode (17) disposed on the main surface of the n-SiC layer (12) by being spaced apart from the source contact electrode (16); and an interlayer insulating film (210) positioned between the source contact electrode (16) and the gate electrode (17). The decreasing rate of the electrical resistance of the interlayer insulating film (210) is 5 % or less when the insulating film is heated to 1200°C or below, in a state wherein the source contact electrode (16) and the interlayer insulating film (210) are adjacent to each other.