| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor having superior indium-composition ratio and crystallinity, and a method of manufacturing the same. SOLUTION: The heterojunction bipolar transistor 1 includes: a collector layer 5 formed of a hexagonal system gallium nitride-based semiconductor and having an n-type gallium nitride-based semiconductor layer 5b; a base layer 7 formed of a p-type gallium nitride-based semiconductor layer, including In and provided on a principal surface S4 of the collector layer 5; and an emitter layer 9, formed of another n-type gallium nitride-based semiconductor layer and provided on a principal surface S5 of the base layer 7. The principal surface S4 of the collector layer 5 is inclined at an angle of 60 degrees or more and 80 degrees or less, with respect to a c axis of the hexagonal system gallium nitride-based semiconductor of the collector layer 5. COPYRIGHT: (C)2011,JPO&INPIT |
