| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase change memory device having a lower electrode including a low-resistance lower layer and a high resistance upper layer. SOLUTION: The phase change memory device includes a lower electrode, a phase-change-material pattern, and an upper electrode. The phase-change-material pattern is electrically connected to the lower electrode and the upper electrode is electrically connected to the phase-change-material pattern. The lower electrode includes: a first structure containing metal semiconductor compound; a second structure formed on the first structure containing metal nitride with a bottom wider than a top; and a third structure containing metal nitride that contains X-element and formed on the second structure, in which the X-element contains one or at least two of silicon (Si), boron (B), aluminum (Al), and oxygen (O) or carbon (C). COPYRIGHT: (C)2011,JPO&INPIT
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