| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method, capable of effectively executing the reforming treatment of a film such as removal of impurities in the film during the CVD film deposition without any excessive apparatus cost. SOLUTION: The film deposition apparatus includes a chamber, a susceptor for supporting a wafer, a raw gas feeding mechanism, a heater for heating the wafer, and a hydrogen radical feeding mechanism 40 which is separately provided from the chamber and feeds hydrogen radicals into the chamber. The hydrogen radical feeding mechanism 40 includes a vessel 51 for generating hydrogen radicals, a hydrogen gas feeding mechanism 42 for feeding hydrogen gas in the vessel 51, a catalyst wire 53 provided in the vessel 51, a variable DC power source 56 for heating the catalyst wire 53, and a hydrogen radical introducing pipe 43 for introducing the hydrogen radicals generated by the contact of the hydrogen gas with the catalyst wire 53 heated in the vessel 51 into the chamber 1. COPYRIGHT: (C)2011,JPO&INPIT
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