EPITAXIAL WAFER AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: An epitaxial wafer and manufacturing method thereof are provided to prevent the defects of an epitaxial layer due to a bubble type void aggregate by controlling the number of bubble type void aggregates. CONSTITUTION: A silicon crystal is grown up by adding hydrogen and nitrogen to silicon-melt solutions. A silicon substrate is prepared by mechanically processing the silicon crystal. An epitaxial layer is formed on the surface of the silicon substrate. A single silicon crystal is grown under the partial hydrogen pressure between 0.1 mbar and 0.4 mbar.