发明名称 MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A magnetic tunnel junction device and a method for manufacturing the same are provided to prevent the diffusion of an element for deteriorating the operation property of a magnetic tunnel junction by processing a magnetic junction device with an in-situ in deposition. CONSTITUTION: A first magnetic layer(10) has a magnetization direction which can be reversed. A nonmagnetic layer(20) is located on the first magnetic layer. A second magnetic layer(30) is located on the nonmagnetic layer. A second magnetic layer has a fixed magnetization direction. An oxidation prevention layer(40) is located on the second magnetic layer. A third magnetic layer(50) is located on the oxidation prevention layer. The third magnetic layer holds the magnetization direction of the second magnetic layer. An anti- ferroelectric material layer(60) holds the magnetization direction of the third magnetic layer.
申请公布号 KR20110038419(A) 申请公布日期 2011.04.14
申请号 KR20090095703 申请日期 2009.10.08
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 SHIN, IL JAE;MIN, BYOUNG CHUL;SHIN, KYUNG HO
分类号 G11C11/15 主分类号 G11C11/15
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