发明名称 THIN FILM TRANSISTOR SUBSTRATE, THIN FILM TRANSISTOR TYPE LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE
摘要 There are provided: a thin film transistor substrate provided with an amorphous transparent conductive film in which residue due to etching hardly occurs; a liquid crystal display device which utilizes the thin film transistor substrate; and a method for manufacturing a thin film transistor substrate in which the thin film transistor substrate can be efficiently obtained. Provided is a thin film transistor substrate in which there is provided a transparent substrate, on the transparent substrate there are formed a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a transparent pixel electrode, and a transparent electrode, and the transparent pixel electrode is formed with a transparent conductive film and is electrically connected to the source electrode or the drain electrode, wherein the transparent conductive film which constitutes the transparent pixel electrode is composed of an indium oxide containing gallium.
申请公布号 US2011084280(A1) 申请公布日期 2011.04.14
申请号 US20100904411 申请日期 2010.10.14
申请人 SUMITOMO METAL MINING CO., LTD. 发明人 NAKAYAMA TOKUYUKI;ABE YOSHIYUKI
分类号 H01L33/42;H01L21/283;H01L29/786 主分类号 H01L33/42
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