METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for manufacturing a semiconductor device wherein contact with both an n-type SiC region and a p-type SiC region is possible, and it is possible to minimize oxidation-caused increases in contact resistance. The disclosed method for manufacturing a semiconductor device (1) is provided with a step in which an SiC layer (12) comprising silicon carbide is prepared and a step in which an ohmic electrode (16) is formed on a principal surface of the SiC layer (12). The step in which an ohmic electrode (16) is formed includes a step in which a conductor layer (51, 52, 53) that will become the ohmic electrode (16) is formed on a principal surface of the SiC layer (12) and a step in which the conductor layer (51, 52, 53) is changed into an ohmic electrode (16) via heat treatment. After the heat-treatment step, the temperature of the ohmic electrode (16) when the surface thereof is exposed to an oxygen-containing atmosphere is set to 100°C or less.