| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-cost mounting structure excellent in thermal/electrical properties, temperature cycle reliability and high temperature resistance while using a lead-free material having a high melting point since thermal stress in the shearing direction is high wherein the stress is generated in a chip due to a thermal expansion difference, thereby producing a chip crack when a lead-free hard high-temperature solder or high-strength nano Ag is used for joining, and accordingly lead free is not achieved in a semiconductor device required to have a heat resistance of 250°C, in a mounting structure where a semiconductor chip is sandwiched with Cu electrodes. <P>SOLUTION: In a structure of a semiconductor device, a low thermal expansion plate is inserted between a semiconductor chip and each Cu electrode, and each chip side is joined via a high-temperature lead-free solder while each Cu electrode side is joined via a porous Ag layer having a porosity of 20-70%. <P>COPYRIGHT: (C)2011,JPO&INPIT |
