发明名称 Semiconductor device
摘要 One interface chip and a plurality of core chips are electrically connected via a plurality of through silicon vias. A data signal of a driver circuit is input into the core chip via any one of the through silicon vias. An output switching circuit activates any one of tri-state inverters and selects one of the through silicon vias. The tri-state inverters amplify the data signal and transmit it to the through silicon via. Similarly, an input switching circuit activates any one of tri-state inverters. These tri-state inverters also amplify the data signal transmitted from the through silicon via and supply it to the receiver circuit.
申请公布号 US2011084729(A1) 申请公布日期 2011.04.14
申请号 US20100923752 申请日期 2010.10.06
申请人 ELPIDA MEMORY, INC. 发明人 YOKO HIDEYUKI
分类号 H03K19/00;H03K17/00 主分类号 H03K19/00
代理机构 代理人
主权项
地址