发明名称 |
Verfahren zur Herstellung einer Photomaske |
摘要 |
A photomask blank has a light-shielding film (3) composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy. |
申请公布号 |
DE602007012785(D1) |
申请公布日期 |
2011.04.14 |
申请号 |
DE20076012785T |
申请日期 |
2007.04.16 |
申请人 |
SHIN-ETSU CHEMICAL CO. LTD.;TOPPAN PRINTING CO. LTD. |
发明人 |
YOSHIKAWA, HORIKI;INAZUKI, YUKIO;OKAZAKI, SATOSHI;HARAGUCHI, TAKASHI;SAGA, TADASHI;FUKUSHIMA, YUICHI |
分类号 |
C23C14/06;G03F1/30;G03F1/32;G03F1/34;G03F1/54 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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