| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve performance of a memory system by improving access efficiency of a semiconductor memory. <P>SOLUTION: The memory system inputs and outputs data using N terminals, and includes first memory and second memory storing data accessed by a predetermined unit and having M terminals for inputting and outputting the data. The first memory and second memory have an address generating circuit for generating a third address based on a first address for performing data access in N unit, a second address for performing data access in a predetermined unit, and allocation information for allocating the M terminals to the N terminals. By generating the third address based on the first address, the second address and the allocation information for each of the first memory and second memory, the access efficiency of the semiconductor memory can be improved, and the performance of the memory system can be improved. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
