| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor substrate, having no process strain at a high efficiency with proper reproducibility by controlling warpage amount. SOLUTION: The B surface of surfaces A and B of a nitride semiconductor crystal having a face/back relationship is curved; the surface B is flattened with the surface A being curved, as is; the surface B is contact-fixed with a plate to make the surface A flat, by applying a load on the crystal from the side of the surface A; and then the substrate is removed. COPYRIGHT: (C)2011,JPO&INPIT |
