| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming silicide wherein silicide can be formed at lower temperatures without increasing the wet cleaning process. SOLUTION: In the method for forming silicide on a substrate 101 having a surface where silicon and silicon oxide are exposed, the temperature of the substrate 101 is set to be 400°C or more, and a manganese organic compound gas is supplied onto the surface of the substrate 101 where silicon and silicon oxide are exposed, and the silicon exposed to the surface of the substrate 101 is selectively manganese-silicified. COPYRIGHT: (C)2011,JPO&INPIT |
