| 摘要 |
<P>PROBLEM TO BE SOLVED: To stably ensure high external quantum efficiency in a semiconductor light-emitting element. <P>SOLUTION: At least a single recess (20) and/or projection (21) that scatters or diffracts light generated in an active layer (12) is formed on a surface portion of a substrate (10). The recess and/or projection has a side surface shaped to have a first angled surface (22) and a second angled surface (23), or first and second tilt angles θ<SB>1</SB>and θ<SB>2</SB>, such that crystal defects do not are not generated in semiconductor layers (11 and 13). Preferably, the side surfaces are configured by the first and second angled surfaces (22 and 23), such that θ<SB>1</SB>>θ<SB>2</SB>holds, or by a projecting curved side surface (26). <P>COPYRIGHT: (C)2011,JPO&INPIT |
