| 摘要 |
A method for selective formation of trenches is disclosed. First, a substrate is provided. The substrate includes a first semiconductor element and a second semiconductor element. The first semiconductor element has a dopant. Second, a wet etching procedure is carried out to selectively form a pair of trenches in the substrate around the second semiconductor element, a first source/drain ion implantation is selectively carried out on the first semiconductor element, or a second source/drain ion implantation is selectively carried out on the second semiconductor element.
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