ION BEAM ASSISTED SPUTTERING DEVICE AND ION BEAM ASSISTED SPUTTERING METHOD

摘要

Disclosed is an ion beam assisted sputtering device provided with: a target; a sputter ion source which irradiates the target with sputter ions and knocks out some of constituent particles of the target; a deposition region in which a base material for depositing thereon the particles knocked out from the target is installed; and an assisted ion beam irradiation unit which applies an assisted ion beam from a direction oblique to the direction of the normal to the deposition surface of the base material installed in the deposition region, said ion beam assisted sputtering device being characterized in that the sputter ion source comprises a plurality of ion guns arranged so as to be able to irradiate the target from the one side end portion to the other side end portion with sputter ion beams, and the current values for generating the sputter ion beams of the plurality of ion guns are respectively set.